Dielectric permittivity of Bi and the alloys Bi1−xSbx doped by donor impurities
The dielectric permittivity of bismuth monocrystals and donor-impurity doped bismuth-antimony alloys is obtained as a result of analyzing the plasma reflection spectra of polarized infrared radiation. Values of the high-frequency dielectric permittivity tensor component ɛt8 and their anisotropies are determined. The dependence of ɛt8 on the antimony content detected on Bi1−xSbx alloys (up to 12 at.% Sb) correlates with the change in the energetic gap at the L-point of the Brillouin zone. Experimental results agree qualitatively with the model  taking account of the contribution of the interband transitions at the Land T-points of the Brillouin zone in the dielectric permittivity of a crystal.
KeywordsRadiation Reflection Anisotropy Bismuth Antimony
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