Soviet Physics Journal

, Volume 33, Issue 3, pp 267–269 | Cite as

Dielectric permittivity of Bi and the alloys Bi1−xSbx doped by donor impurities

  • V. M. Grabov
  • V. V. Kudachin
  • A. S. Mal'tsev
  • N. P. Stepanov
Physics of Semiconductors and Dielectrics


The dielectric permittivity of bismuth monocrystals and donor-impurity doped bismuth-antimony alloys is obtained as a result of analyzing the plasma reflection spectra of polarized infrared radiation. Values of the high-frequency dielectric permittivity tensor component ɛt8 and their anisotropies are determined. The dependence of ɛt8 on the antimony content detected on Bi1−xSbx alloys (up to 12 at.% Sb) correlates with the change in the energetic gap at the L-point of the Brillouin zone. Experimental results agree qualitatively with the model [3] taking account of the contribution of the interband transitions at the Land T-points of the Brillouin zone in the dielectric permittivity of a crystal.


Radiation Reflection Anisotropy Bismuth Antimony 
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Copyright information

© Plenum Publishing Corporation 1990

Authors and Affiliations

  • V. M. Grabov
    • 1
  • V. V. Kudachin
    • 1
  • A. S. Mal'tsev
    • 1
  • N. P. Stepanov
    • 1
  1. 1.A. I. Gertsen Leningrad Pedagogic InstituteUSSR

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