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Soviet Physics Journal

, Volume 33, Issue 3, pp 267–269 | Cite as

Dielectric permittivity of Bi and the alloys Bi1−xSbx doped by donor impurities

  • V. M. Grabov
  • V. V. Kudachin
  • A. S. Mal'tsev
  • N. P. Stepanov
Physics of Semiconductors and Dielectrics

Abstract

The dielectric permittivity of bismuth monocrystals and donor-impurity doped bismuth-antimony alloys is obtained as a result of analyzing the plasma reflection spectra of polarized infrared radiation. Values of the high-frequency dielectric permittivity tensor component ɛt8 and their anisotropies are determined. The dependence of ɛt8 on the antimony content detected on Bi1−xSbx alloys (up to 12 at.% Sb) correlates with the change in the energetic gap at the L-point of the Brillouin zone. Experimental results agree qualitatively with the model [3] taking account of the contribution of the interband transitions at the Land T-points of the Brillouin zone in the dielectric permittivity of a crystal.

Keywords

Radiation Reflection Anisotropy Bismuth Antimony 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1990

Authors and Affiliations

  • V. M. Grabov
    • 1
  • V. V. Kudachin
    • 1
  • A. S. Mal'tsev
    • 1
  • N. P. Stepanov
    • 1
  1. 1.A. I. Gertsen Leningrad Pedagogic InstituteUSSR

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