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Admixture potentials in isovalent solid solutions of semiconductors

  • Physics of Semiconductors and Dielectrics
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Abstract

A development of the Lifshits model applicable to isovalent solid solutions is carried out. The uniform part of the deformation of a crystal lattice, conditioned by the difference in the atomic dimensions of the components, is considered in a null Hamiltonian. The matrix elements of the admixture potentials are found and a prognosis is conducted of the connected states of the electrons on the individual isovalent centers in the compounds A3B5. The essential sensitivity to deformation effects of deep admixture levels in A3B5 is explained.

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Authors and Affiliations

  1. Donets Polytechnic Institute, USSR

    A. Yu. Zakharov & L. P. Mironenko

Authors
  1. A. Yu. Zakharov
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  2. L. P. Mironenko
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 58–62, March, 1990.

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Zakharov, A.Y., Mironenko, L.P. Admixture potentials in isovalent solid solutions of semiconductors. Soviet Physics Journal 33, 251–254 (1990). https://doi.org/10.1007/BF00895963

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  • DOI: https://doi.org/10.1007/BF00895963

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