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Calculation of intravalley and intervalley transition probabilities in the course of electron scattering by a gallium arsenide surface

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

We employed the surface Green's function method in the discontinuous surface potential model to calculate the coefficients of reflection from (111) and (110) planes for electrons propagating in gallium arsenide. The complex band structure required for the calculation was obtained by the empirical pseudopotential method. The results make it possible to determine the intravalley and intervalley scattering probabilities as the electrons are reflected by the crystal surface. In particular, it is demonstrated that in the case of the (111) gallium arsenide surface γL and Lγ intervalley transitions are more probable than γγ and LL intravelley transitions.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    V. A. Goryunov & V. N. Chernyshov

Authors
  1. V. A. Goryunov
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  2. V. N. Chernyshov
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 42–46, March, 1990.

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Goryunov, V.A., Chernyshov, V.N. Calculation of intravalley and intervalley transition probabilities in the course of electron scattering by a gallium arsenide surface. Soviet Physics Journal 33, 237–240 (1990). https://doi.org/10.1007/BF00895960

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  • DOI: https://doi.org/10.1007/BF00895960

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