Abstract
Anomalous tensoelectric phenomena induced in a tunnel p-n junction by a concentrated load and by hydrostatic compression were studied. The anomalous tensoelectric effects are caused by the action of concentrators of mechanical stresses in the vicinity of the p-n junction, giving rise to local microplastic strain. Under the conditions of hydrostatic compression prolate inclusions ∿100–200 å long play the role of concentrators. Analysis of irreversible changes in the current-voltage characteristics of tunnel p-n junctions made it possible to separate the energy levels of the defects produced with plastic strain of gallium arsenide.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
Literature cited
W. Rindner and I. Braun, J. Appl. Phys.,34, No. 7, 1958 (1963).
W. Rindner, J. Appl. Phys.,36, No. 8, 2513 (1965).
A. L. Polyakova, Deformation of Semiconductors and Semiconductor Devices [in Russian], énergiya, Moscow (1979).
V. A. Nadtochii, A. Z. Kalimbet, et al., Fiz. Khim. Obrab. Mater., No. 1, 115 (1985).
K. Bulthuis, Philips Res. Rep.,20, 415 (1965).
K. Bulthuis, Philips Res. Rep.,21, 85 (1966).
Z. M. Alekseeva, A. P. Vyatkin, and N. P. Krivorotov, in: Gallium Arsenide [in Russian], Tomsk State University Press, Tomsk (1974), Vol. 4, p. 229.
Z. M. Alekseeva, A. P. Vyatkin, N. P. Krivorotov, and S. S. Shchegol', Abstracts of Reports at the 4th All-Union Conference on the Study of Gallium Arsenide, Tomsk State University Press, Tomsk (1978), p. 55.
L. N. Syrkin and N. N. Feoktistova, Fiz. Tverd. Tela,6, No. 9, 1802 (1972).
V. I. Nikitenko, M. M. Myshlyaev, and V. G. Eremenko, Fiz. Tverd. Tela,9, No. 9, 2604 (1967).
M. G. Mil'vidskii and V. B. Osvenskii, Structural Defects in Semiconductor Single-Crystals [in Russian], Metallurgiya, Moscow (1984).
J. Jung and R. Gleichmann, J. Mater. Sci.,19, No. 10, 3399 (1984).
J. Hirth and I. Lote, Theory of Dislocations [Russian translation], Atomizdat, Moscow (1972).
U. B. Khilich, in: Strength of Glass [Russian translation], Mir, Moscow (1969).
R. S. Classen, J. Appl. Phys.,32, 2372 (1961).
O. Breitenstein and T. Wosinski, Phys. Status Solidi A,77, No. 2, 107–110 (1983).
T. Wosinski, A. Morawski, and T. Figielski, Appl. Phys. A.,30, No. 4, 233 (1983).
Zhan-Guo Wang, L. A. Bebedo, and H. G. Grimmeiss, J. Phys. C,17, No. 2, 259 (1984).
Author information
Authors and Affiliations
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 84–88, August, 1987.
Rights and permissions
About this article
Cite this article
Alekseeva, Z.M., Vyatkin, A.P., Krivorotov, N.P. et al. Anomalous tensoelectric effects in gallium arsenide tunnel diodes. Soviet Physics Journal 30, 716–720 (1987). https://doi.org/10.1007/BF00895951
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00895951