Skip to main content
SpringerLink
Log in

Strain-electrical phenomena in gallium arsenide structures

  • Published:
Soviet Physics Journal Aims and scope

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Literature cited

  1. V. S. Shadrin (editor), Physics and Techniques of Semiconductors [in Russian], NÉTI, Novosibirsk (1972).

    Google Scholar 

  2. W. Erler and L. Walter, Electrical Measurements of Nonelectrical Quantities Using Semi-conductor Strain Resistors [Russian translation], Mir, Moscow (1974).

    Google Scholar 

  3. W. Rindner, J. Appl. Phys.,33, 2479 (1962).

    Google Scholar 

  4. W. Rindner and I. Braun, J. Appl. Phys.,34, No. 7, 1958 (1963).

    Google Scholar 

  5. J. J. Wortman, J. R. Hauser, and R. M. Burger, J. Appl. Phys.,35, No. 7, 2122 (1964).

    Google Scholar 

  6. J. J. Wortman and J. R. Hauser, J. Appl. Phys.,37, 3527 (1966).

    Google Scholar 

  7. W. B. Howard, A. B. Fowler, and D. M. Lead, J. Appl. Phys.,39, No. 3, 1533 (1968).

    Google Scholar 

  8. E. Schmidt, Solid State Comm.,9, No. 13, 1187 (1971).

    Google Scholar 

  9. I. Ido, A. Yochida, and T. Arizumi, Jpn. J. Appl. Phys.,11, 10, 1480 (1978).

    Google Scholar 

  10. R. M. Moore, IEEE Trans. Electron. Devices,ED-16, No. 2, 186 (1969).

    Google Scholar 

  11. R. M. Moore, IEEE Trans. Electron. Devices,ED-16, No. 10, 850 (1969).

    Google Scholar 

  12. N. Angelov and L. Mladzhov, Tr. Akad., Ser. 3, Book 2 (1970).

  13. N. Angelov, Godishn. Vyssh. Tekh. Uchebn. Zaved. Fiz.,9, No. 2, 45, 1972 (1974).

    Google Scholar 

  14. I. I. Elinson et al., Radiotekh. Elektron.,15, No. 1, 210 (1970).

    Google Scholar 

  15. H. Okamoto, H. Ariyoshi, and Y. Mitzushima, Solid State Electron.,12, No. 5, 441 (1969).

    Google Scholar 

  16. A. B. Makarevich et al., Akust. Zh.,20, No. 3, 443 (1974).

    Google Scholar 

  17. M. S. Kaufman, V. I. Pokalyakin, and G. V. Stepanov, Radiotekh. Elektron.,21, No. 11, 2446 (1976).

    Google Scholar 

  18. A. L. Polyakova, Tr. Akust. Inst., No. 14, 56 (1971).

    Google Scholar 

  19. S. L. Miller, M. I. Nathan, and A. S. Smith, Phys. Rev. Lett.,4, No. 2, 60 (1964).

    Google Scholar 

  20. H. Fritzche and J. J. Tiemann, Phys. Rev.,130, No. 2, 617 (1963);139, No. 3A, 920 (1965).

    Google Scholar 

  21. T. N. Anashkina et al. Fiz. Tverd. Tela,9, No. 1, 294 (1967).

    Google Scholar 

  22. A. Pochat and P. Johannin, CR Acad. Sci. Ser. B,266, No. 22, 1379 (1968).

    Google Scholar 

  23. L. N. Syrkin and N. N. Feoktistova, Fiz. Tekh. Poluprovodn.,6, No. 9, 1802 (1972).

    Google Scholar 

  24. V. V. Golovanov and A. Z. Panakhov, Fiz. Tekh. Poluprovodn.,6, No. 11, 2280 (1972);7, No. 3, 640 (1973).

    Google Scholar 

  25. C. W. Fischer and E. L. Heasell, J. Phys. Chem. Solids,35, No. 7, 807 (1974).

    Google Scholar 

  26. E. Pitteli and W. Rindner, Solid State Electron.,10, No. 9, 911–916 (1967).

    Google Scholar 

  27. R. Kiggins and G. Milnes, ISA Trans., No. 3, 229 (1964).

    Google Scholar 

  28. Z. M. Alekseeva, A. P. Vyatkin, and N. P. Krivorotov, in: Gallium Arsenide, No. 4, Tomsk State University (1974).

  29. A. P. Vyatkin, N. P. Krivorotov, and A. M. Misik, Izv. Vyssh. Uchebn. Zaved. Fizika, No. 4, 60 (1976).

    Google Scholar 

  30. Z. M. Aleksseva, A. P. Vyatkin, and N. P. Krivorotov, Izv. Vyssh. Uchebn. Zaved. Fizika, No. 9, 74 (1976).

    Google Scholar 

  31. Z. M. Alekseeva, A. P. Vyatkin, and N. P. Krivorotov, Fiz. Tekh. Poluprovodn.,11, 222 (1977).

    Google Scholar 

  32. A. P. Vyatkin and N. P. Krivorotov, Izv. Vyssh. Uchebn. Zaved. Fizika, No. 3, 134 (1977).

    Google Scholar 

  33. Z. M. Alekseeva et al., Radiat. Izv. Vyssh. Uchebn. Zaved. Fizika, No. 9, 88 (1976).

    Google Scholar 

  34. N. P. Krivorotov, A. P. Vyatkin, and S. S. Shchegol', Prib. Tekh. Eksp., No. 2, 226 (1977).

    Google Scholar 

  35. N. P. Krivorotov et al., Pribory Tekh. Eksp., No. 6, 168 (1974).

    Google Scholar 

  36. Z. M. Alekseeva et al., Phys. Status Solidi (b),88, 321 (1978).

    Google Scholar 

  37. E. O. Kane, J. Appl. Phys.,32, 83 (1961).

    Google Scholar 

  38. G. E. Pikus, Principles of the Theory of Semiconductor Devices [in Russian], Nauka, Moscow (1965).

    Google Scholar 

  39. V. L. Bonch-Bruevich and P. S. Serebrennikov Radiotekh. Elektron.,6, 12, 2041 (1961).

    Google Scholar 

  40. G. L. Bir and G. E. Pikus, Symmetry and Deformation Effects in Semiconductors [in Russian], Nauka, Moscow (1972).

    Google Scholar 

  41. Z. M. Alekseeva et al., Proc. Fourth All-Union Conference on Gallium Arsenide, Tomsk (1978).

  42. A. P. Vyatkin, N. P. Krivorotov, and S. S. Shchegol', Proc. Fourth All-Union Conference on Gallium Arsenide, Tomsk (1978).

  43. A. A. Vilisov and N. G. Filonov, Izv. Vyssh. Uchebn. Zaved., Fizika, No. 2, 146 (1977).

    Google Scholar 

  44. A. P. Vyatkin, N. K. Maksimova, and N. G. Filonov, Fiz. Tekh. Poluprovodn.,12, No. 7, 1384 (1978).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk University, USSR

    P. Vyatkin

Authors
  1. P. Vyatkin
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 91–104, January, 1980.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Vyatkin, P. Strain-electrical phenomena in gallium arsenide structures. Soviet Physics Journal 23, 66–77 (1980). https://doi.org/10.1007/BF00895767

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00895767

Keywords

Search

Navigation