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Structure, electron states, and electrophysical properties of gallium arsenide surfaces

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This review has analyzed studies of the surface physics of monocrystalline gallium arsenide as of 1978. Special attention has been given to peculiarities in structure, lattice dynamics, and the spectra of surface electron states in atomically pure and real GaAs surfaces as compared to Ge and Si. These peculiarities manifest themselves in the specifics of the electrophysical properties of GaAs surfaces, quasisurface conductivity, capacitance of structures with a potential barrier, nonequilibrium transfer processes, radiant processes, and other phenomena characteristic of polar noncentrally symmetric semiconductors. At present the development of gallium arsenide surface physics is proceeding in two directions: 1) study of the micromechanism of electronic processes on atomically pure surfaces; 2) study of the nature and characteristics of various electron-ion processes on a real surface. Important information on the surface can be obtained by study of phenomena in which surface quasiparticles participate — phonons, plasmons, excitons, and mixed polaritons.

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  1. Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, USSR

    N. L. Dmitruk

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 38–51, January, 1980.

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Dmitruk, N.L. Structure, electron states, and electrophysical properties of gallium arsenide surfaces. Soviet Physics Journal 23, 24–35 (1980). https://doi.org/10.1007/BF00895763

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