Literature cited
T. Sawada and H. Hasegawa, Thin Solid Films,56, 183 (1979).
C. B. Waimann, Thin Solid Films,56, 173 (1979).
S. V. Tikhov, V. V. Martynov, B. I. Bednyi, and I. A. Karpovich, in: Proceedings of Seventh All-Union Symposium on Electronic Processes on the Surface of Semiconductors and at Semiconductor-Dielectric Interfaces Part II, [in Russian], Novosibirsk (1980), pp. 238–239.
O. L. Lile, O. A. Collins, L. Messick, and A. R. Clawson, Appl. Phys. Lett.,32, No. 4, 247 (1978).
A. Colquhoun, E. Kohn, and H. L. Hartnagel, IEEE Trans. Electron. Devices,ED-25, No. 3, 375–376 (1978).
S. V. Tikhov, B. I. Bednyi, et al., Mikroelektronika,10, No. 3, 250 (1981).
A. Ya. Vul', K. V. Sanin, et al., Pis'ma Zh. Tekh. Fiz.,5, No. 15, 930 (1981).
A. K. Zakharov, I. G. Neizvestnyi, and V. N. Ovsyuk, in: Properties of Metal-Insulator-Semiconductor Structures [in Russian], Nauka, Moscow (1976), pp. 47–48.
P. V. Pavlov, E. I. Zorin, and D. I. Tetel'baum, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 1, 76 (1980).
E. I. Zorin, P. V. Pavlov, and D. I. Tetel'baum, Ion Doping of Semiconductors [in Russian], Energiya, Moscow (1975).
A. G. Foyt, W. T. Zingley, C. M. Wolfe, and I. P. Donnely, Solid State Electron.,12, No. 4, 209 (1969).
V. D. Okunev, A. P. Mamontov, et al., Fiz. Tekh. Poluprovodn.,4, No. 1, 101 (1970).
Author information
Authors and Affiliations
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 89–92, May, 1983.
Rights and permissions
About this article
Cite this article
Tikhov, S.V., Martynov, V.V., Kalinin, A.N. et al. Influence of proton irradiation on the properties of a metal (Au)-anodic oxide-gallium arsenide structure. Soviet Physics Journal 26, 498–501 (1983). https://doi.org/10.1007/BF00895742
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00895742