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Banded structure of filamentary silicon crystals

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Soviet Physics Journal Aims and scope

Conclusions

  1. 1.

    On ground ends of silicon filamentary crystals prepared by the chemical transport reaction method in a closed system, a periodic system of impurity bands has been found, parallel to type {211} planes.

  2. 2.

    The bands discovered are unambiguously related to steps on the side faces of FC; they extend inside the crystal parallel to each other from incoming corners of all the steps.

  3. 3.

    The experimental data described confirm the two-stage growth model of filamentary crystals.

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Literature cited

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  3. R. Wagner, in: Single-Crystal Filaments and Reinforced Materials [Russian translation], Mir, Moscow (1973), p. 42.

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Authors and Affiliations

  1. Voronezh Polytechnic Institute, USSR

    A. A. Shchetinin, A. I. Dunaev, A. F. Tatarenkov & Yu. P. Fedorov

Authors
  1. A. A. Shchetinin
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  2. A. I. Dunaev
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  3. A. F. Tatarenkov
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  4. Yu. P. Fedorov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 119–121, April, 1979.

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Shchetinin, A.A., Dunaev, A.I., Tatarenkov, A.F. et al. Banded structure of filamentary silicon crystals. Soviet Physics Journal 22, 449–452 (1979). https://doi.org/10.1007/BF00895676

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  • DOI: https://doi.org/10.1007/BF00895676

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