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Effects of germanium on radiation-defect formation and annealing in nuclear-doped silicon

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

Abstract

Radiation-defect accumulation and annealing have been examined for nucleardoped silicon in relation to germanium doping level. Results have been obtained from the temperature dependence of the Hall coefficient at various stages in60Co gamma irradiation and subsequent annealing. The formation rates for the main compensating defects (other than A centers) vary nonmonotonically, while the annealing temperatures for carbon-bearing complexes containing E1 levels increase with the germanium concentration. The results are interpreted on the assumption that there are dopant-defect inclusions whose gettering behavior and surrounding stresses are dependent on the germanium level. It is also concluded that there are changes in the effective free-vacancy and interstitial carbon-atom trapping cross sections for oxygen in the presence of germanium.

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Authors and Affiliations

  1. Sevchenko Applied Physics Research Institute, Belorussian University, Belarus

    N. G. Kolin, P. F. Lugakov, V. V. Luk'yanitsa & A. A. Stuk

Authors
  1. N. G. Kolin
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  2. P. F. Lugakov
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  3. V. V. Luk'yanitsa
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  4. A. A. Stuk
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 98–102, November, 1990.

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Kolin, N.G., Lugakov, P.F., Luk'yanitsa, V.V. et al. Effects of germanium on radiation-defect formation and annealing in nuclear-doped silicon. Soviet Physics Journal 33, 982–985 (1990). https://doi.org/10.1007/BF00895641

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  • DOI: https://doi.org/10.1007/BF00895641

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