Soviet Physics Journal

, Volume 33, Issue 11, pp 949–952 | Cite as

Effect of annealing on the photoelectric properties of single crystals of InSe

  • Z. D. Kovalyuk
  • A. B. Yuriichuk
  • S. P. Voronyuk
Physics of Semiconductors and Dielectrics
  • 18 Downloads

Abstract

The effect of different heat-treatment regimes on recombination processes in n-In1.03Se0.97<0.5Zn> was studied by the method of square-wave modulation of light intensity, with subsequent analysis of the experimental data by the least squares method on a computer. The specimens were annealed at a temperature of 360–400°C in a vacuum [1] or Zn vapors [11] for different periods of time. They were then slowly cooled at a rate of 2 deg/min (A) or quenched (B). It was established the lifetime τ of the nonequilibrium carriers increases by nearly an order of magnitude in case IB, while the ratio of s- and r-centers remains nearly the same. In case IIA, τs decreases roughly by a factor of two, while in the best specimens it reaches 2.3·10−5 sec. Annealing for 20 h in regime IA leads to a large increase (by about 25%) in the density of s-centers.

Keywords

Experimental Data Recombination Light Intensity Recombination Process Photoelectric Property 

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Copyright information

© Plenum Publishing Corporation 1991

Authors and Affiliations

  • Z. D. Kovalyuk
    • 1
  • A. B. Yuriichuk
    • 1
  • S. P. Voronyuk
    • 1
  1. 1.Institute of Problems of Materials ScienceAcademy of Sciences of the Ukrainian SSRUSSR

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