Effect of annealing on the photoelectric properties of single crystals of InSe
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The effect of different heat-treatment regimes on recombination processes in n-In1.03Se0.97<0.5Zn> was studied by the method of square-wave modulation of light intensity, with subsequent analysis of the experimental data by the least squares method on a computer. The specimens were annealed at a temperature of 360–400°C in a vacuum  or Zn vapors  for different periods of time. They were then slowly cooled at a rate of 2 deg/min (A) or quenched (B). It was established the lifetime τ of the nonequilibrium carriers increases by nearly an order of magnitude in case IB, while the ratio of s- and r-centers remains nearly the same. In case IIA, τs decreases roughly by a factor of two, while in the best specimens it reaches 2.3·10−5 sec. Annealing for 20 h in regime IA leads to a large increase (by about 25%) in the density of s-centers.
KeywordsExperimental Data Recombination Light Intensity Recombination Process Photoelectric Property
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