Soviet Physics Journal

, Volume 28, Issue 9, pp 693–697 | Cite as

Photoannealing of defects in irradiated zinc oxide

  • M. M. Mikhailov
Physics of Semiconductors and Dielectrics


The change in the absorption and luminescence spectra of polycrystalline ZnO at 100°K following electron irradiation and photoannealing with. F and F+-light was investigated. It was found that following irradiation, absorption bands of intrinsic point defects appear which after photoannealing are converted into bands of lower energy, tentatively attributed to complex electron centers.


Oxide Zinc Absorption Band Lower Energy Point Defect 
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Copyright information

© Plenum Publishing Corporation 1986

Authors and Affiliations

  • M. M. Mikhailov
    • 1
  1. 1.Scientific-Research Institute of Nuclear PhysicsA. M. Kirov Polytechnical InstituteTomsk

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