This is a preview of subscription content, log in via an institution to check access.
Literature cited
V. G. Bozhkov and O. Yu. Malakhovskii, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 1,94, (1983).
V. G. Bozhkov, G. F. Kovtunenko, and T. A. Avramchikova, Elektron. Tekh., Ser. 2, Poluprovodn. Prib., No. 9, 35 (1979).
V. G. Bozhkov, V. M. Zavodchikov, K. V. Soldatenko, I. P. Chernov, and A. A. Yatis, Elektron. Tekh., Ser. 2, Poluprovod. Prib., No. 8, 15 (1977).
J. D. Levine, J. Appl. Phys.,42, 3991 (1971).
V. I. Strikha, Theoretical Principles of the Operation of a Metal-Semiconductor Contact [in Russian], Naukova Dumka, Kiev (1974).
M. A. Green and J. Shewchun, Solid-State Electron.,16, 1141 (1973).
V. G. Bozhkov, G. F. Kovtunenko, G. M. Surotkina, and L. S. Seiina, Elektron. Tekh., Ser. 2, Poluprovodn. Prib., No. 4, 14 (1978).
S. M. Sze Physics of Semiconductor Devices, Wiley (1969).
Additional information
Translated from Izvestiya Vysshikh Ubchebnykh Zavedenii, Fizika, No. 3, pp. 102–105, March, 1983.
Rights and permissions
About this article
Cite this article
Bozhkov, V.G., Malakhovskii, O.Y. Evaluation of the surface state spectrum in a metal—semiconductor Schottky-barrier contact. Soviet Physics Journal 26, 300–303 (1983). https://doi.org/10.1007/BF00895150
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00895150