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Effect of mechanical stresses in GaAs—metal Schottky-barrier structures on the low-temperature behavior of the volt—ampere characteristics

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Conclusions

  1. 1.

    Elastic mechanical stresses in a metal-GaAs SB contact determined by the structure and thickness of the metallic deposit as well as by the character of interphase interaction during annealing give rise to considerable distortions of the low-temperature VAC of the contact.

  2. 2.

    The nature of distortions of the low-temperature VAC (increase in the ideality index, the appearance of current “step” fit into a model involving the reduction of the barrier height under the action of mechanical stresses and the inhomogeneous distribution of the stresses mentioned over the area of the contact. However, additional investigations are necessary to reach a final conclusion.

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Authors
  1. V. G. Bozhkov
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  2. O. Yu. Malakhovskii
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  3. A. M. Misik
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Additional information

Translated from Izvestiya Vysshikh Uchebnyk Zavedenii, Fizika, No. 3, pp. 97–101, March, 1983.

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Bozhkov, V.G., Malakhovskii, O.Y. & Misik, A.M. Effect of mechanical stresses in GaAs—metal Schottky-barrier structures on the low-temperature behavior of the volt—ampere characteristics. Soviet Physics Journal 26, 296–300 (1983). https://doi.org/10.1007/BF00895149

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  • DOI: https://doi.org/10.1007/BF00895149

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