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Negative differential resistance in amorphous germanium

1. Fundamental dependence of current-voltage curve parameters on specimen geometry

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Abstract

Results of a study of static current-voltage curves of amorphous germanium diodes with gap-type electrode construction are presented. It is shown that with increase in the interelectrode distance there occurs a transition from a switching regime with irreversible memory to a stable negative differential resistance regime. The diode current-voltage curves and data obtained by studying potential distribution over specimen length are explained with a model of space charge-limited currents.

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Authors and Affiliations

  1. Dnepropetrovsk Branch of the Institute of Mechanics of the Academy of Sciences of the Ukrainian SSR, Ukraine

    V. D. Okunev

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  1. V. D. Okunev
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 103–107, March, 1980.

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Okunev, V.D. Negative differential resistance in amorphous germanium. Soviet Physics Journal 23, 265–268 (1980). https://doi.org/10.1007/BF00895091

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  • DOI: https://doi.org/10.1007/BF00895091

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