Literature cited
J. Itoh and N. Hashimoto, J. Appl. Phys.,38, 2 (1967).
R. W. Bower and J. Mayer, Appl. Phys. Lett.,20, No. 9, 359 (1972).
J. Ohura and Y. Takeishi, Jpn. J. Appl. Phys.,9, No. 5, 458 (1970).
Yu. A. Gol'dberg, D. N. Nasledov, and B. V. Tsarenkov, Prib. Tekh. Eksp., No. 3, 203 (1971).
I. D. Romanova, N. K. Maksimova, E. N. Pekarskii, and M. P. Yakubenya, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 4, 152 (1976).
O. P. Kanchukovskii et al., Izv. Vyssh. Uchebn. Zaved., Fiz., No. 9, 151 (1971).
V. I. Strikha, E. V. Buzaneva, and I. A. Radzievskii, Semiconductor Devices with Schottky Barrier [in Russian], Sovet-skoe Radio, Moscow (1974).
M. Turner and E. Rhoderick, Solid-State Electron.,11, 291 (1968).
A. V. Egorov and V. A. Letyagin, Film Superposition by the Method of Electrical Explosion of the Material. Central Scientific-Research Institute “Elektronika” (Surveys on Electronic Engineering), Ser. 7, No. 12 (1976).
I. M. Vikulin, Sh. D. Kurmashev, V. I. Gin'ko, and V. I. Andreev, Fiz. Tekh. Poluprovodn.,11, 2238 (1977).
Sh. G. Askerov and R. K. Mamedov, Pis'ma Zh. Tekh. Fiz.,4, No. 5, 275 (1978).
V. I. Strikha, Theoretical Principles of the Operation of a Metal-Semiconductor Contact [in Russian], Naukova Dumka, Kiev (1974).
V. S. Vavilov and N. A. Ukhin, Radiation Effects in Semiconductors and Semiconductor Instruments [in Russian], Atomizdat, Moscow (1969).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 125–126, November, 1979.
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Vikulin, I.M., Kurmashev, S.D., Gin'ko, V.I. et al. Influence of heat treatment on the surface barrier parameters of Ni-n-Si structures obtained by the method of electric explosion of a metal. Soviet Physics Journal 22, 1230–1232 (1979). https://doi.org/10.1007/BF00894982
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DOI: https://doi.org/10.1007/BF00894982