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Inversion channel conductivity in indium antimonide

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Abstract

The conduction characteristics of the channel of a metal-oxide-silicon field effect transistor (MOSFET) are calculated with consideration of the effect of the charge of surface states and mobile carriers in the inversion layer. The relationships obtained are presented in the form of simple analytic expressions. Using this calculation a method is developed for determination of surface state parameters by analysis of the gate voltage dependence of MOSFET conductivity.

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Authors and Affiliations

  1. V. I. Ul'yanov (Lenin) Leningrad Electrotechnical Institute, USSR

    O. V. Kosogov, G. D. Lapin & M. S. Miropol'skii

Authors
  1. O. V. Kosogov
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  2. G. D. Lapin
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  3. M. S. Miropol'skii
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 66–72, November, 1979.

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Kosogov, O.V., Lapin, G.D. & Miropol'skii, M.S. Inversion channel conductivity in indium antimonide. Soviet Physics Journal 22, 1178–1183 (1979). https://doi.org/10.1007/BF00894968

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  • DOI: https://doi.org/10.1007/BF00894968

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