Soviet Physics Journal

, Volume 20, Issue 3, pp 375–378 | Cite as

The study of some physical properties of GaAs single crystals and AlxGa1−xAs solid solutions by photoluminescence and cathodoluminescence methods

  • A. I. Keda
  • L. S. Lunin
  • O. D. Lunina


A study is made of the photoluminescence and cathodoluminescence spectra of epitaxial layers of GaAs and AlxGa1−x As solid solutions, grown by the temperature-gradient zone refining technique. The values of the distribution coefficient are found for tellurium, germanium, and zinc as a function of the aluminum content in the liquid zone and the temperature of the zone refining process. The luminescence properties of AlxGa1−xAs doped with germanium, tellurium, and zinc are found as a function of the composition.


Aluminum Zinc Solid Solution GaAs Germanium 
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Copyright information

© Plenum Publishing Corporation 1978

Authors and Affiliations

  • A. I. Keda
    • 1
  • L. S. Lunin
    • 1
  • O. D. Lunina
    • 1
  1. 1.Novocherkassk Polytechnic InstituteUSSR

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