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Soviet Physics Journal

, Volume 20, Issue 3, pp 375–378 | Cite as

The study of some physical properties of GaAs single crystals and AlxGa1−xAs solid solutions by photoluminescence and cathodoluminescence methods

  • A. I. Keda
  • L. S. Lunin
  • O. D. Lunina
Article
  • 18 Downloads

Abstract

A study is made of the photoluminescence and cathodoluminescence spectra of epitaxial layers of GaAs and AlxGa1−x As solid solutions, grown by the temperature-gradient zone refining technique. The values of the distribution coefficient are found for tellurium, germanium, and zinc as a function of the aluminum content in the liquid zone and the temperature of the zone refining process. The luminescence properties of AlxGa1−xAs doped with germanium, tellurium, and zinc are found as a function of the composition.

Keywords

Aluminum Zinc Solid Solution GaAs Germanium 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Literature cited

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Copyright information

© Plenum Publishing Corporation 1978

Authors and Affiliations

  • A. I. Keda
    • 1
  • L. S. Lunin
    • 1
  • O. D. Lunina
    • 1
  1. 1.Novocherkassk Polytechnic InstituteUSSR

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