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The study of some physical properties of GaAs single crystals and AlxGa1−xAs solid solutions by photoluminescence and cathodoluminescence methods

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Abstract

A study is made of the photoluminescence and cathodoluminescence spectra of epitaxial layers of GaAs and AlxGa1−x As solid solutions, grown by the temperature-gradient zone refining technique. The values of the distribution coefficient are found for tellurium, germanium, and zinc as a function of the aluminum content in the liquid zone and the temperature of the zone refining process. The luminescence properties of AlxGa1−xAs doped with germanium, tellurium, and zinc are found as a function of the composition.

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Literature cited

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 117–121, March, 1977.

The authors are indebted to senior scientific worker and Lenin Prize Laureate, V. M. Andreev, for his discussion of the results and for his valuable comments.

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Keda, A.I., Lunin, L.S. & Lunina, O.D. The study of some physical properties of GaAs single crystals and AlxGa1−xAs solid solutions by photoluminescence and cathodoluminescence methods. Soviet Physics Journal 20, 375–378 (1977). https://doi.org/10.1007/BF00894852

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  • DOI: https://doi.org/10.1007/BF00894852

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