The study of some physical properties of GaAs single crystals and AlxGa1−xAs solid solutions by photoluminescence and cathodoluminescence methods
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A study is made of the photoluminescence and cathodoluminescence spectra of epitaxial layers of GaAs and AlxGa1−x As solid solutions, grown by the temperature-gradient zone refining technique. The values of the distribution coefficient are found for tellurium, germanium, and zinc as a function of the aluminum content in the liquid zone and the temperature of the zone refining process. The luminescence properties of AlxGa1−xAs doped with germanium, tellurium, and zinc are found as a function of the composition.
KeywordsAluminum Zinc Solid Solution GaAs Germanium
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