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Thermostimulated conductivity of synthetic semiconductor diamonds doped with boron during synthesis

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Abstract

The properties of diamond as a new material for semiconductor electronics have been studied insufficiently at present. One of the most powerful techniques for study of impurity centers is the method of thermostimulated conductivity (TSC).

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Literature cited

  1. Yu. M. Rotner, N. N. Golembievskii, L. F. Litovchenko, N. N. Kubenskaya, and V. A. Presnov, Prib. Tekh. Eksp., No. 1, 226 (1975).

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Authors and Affiliations

  1. I. I. Mechnikov Odessa State University, USSR

    V. A. Presnov, A. V. Bogdanov & A. F. Klauzov

Authors
  1. V. A. Presnov
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  2. A. V. Bogdanov
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  3. A. F. Klauzov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 130–132, September, 1978.

In conclusion, the authors thank Yu. M. Eotner for providing the synthetic semiconductor diamond specimens for measurement.

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Presnov, V.A., Bogdanov, A.V. & Klauzov, A.F. Thermostimulated conductivity of synthetic semiconductor diamonds doped with boron during synthesis. Soviet Physics Journal 21, 1217–1218 (1978). https://doi.org/10.1007/BF00894579

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  • DOI: https://doi.org/10.1007/BF00894579

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