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Soviet Physics Journal

, Volume 18, Issue 7, pp 1029–1031 | Cite as

Dislocations in CdSb doped by Te and In and special features of the absorption of polarized IR radiation

  • T. S. Gertovich
  • S. I. Grineva
  • I. V. Mel'nichuk
  • I. M. Rarenko
  • S. A. Khramtsova
Brief Communications and Letters to the Editor
  • 11 Downloads

Keywords

CdSb 
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Literature cited

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    V. E. Lashkarev, V. K. Malyutenko, I. M. Rarenko, and V. A. Romanov, Ukrainsk. Fiz. Zh.,11, 572 (1966).Google Scholar
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    T. S. Hertovych, S. T. Hryn'ova, V. M. Hrytsyuk, and I. M. Rarenko, in: Physical Electronics, Part 2, L'vov (1970), p.30.Google Scholar
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    K. D. Tovstyuk and O. M. Borets, Ukrainsk. Fiz. Zh.,7, 1285 (1962).Google Scholar
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    G. Borrman, W. Hartwig, and H. Irmler, Z. Naturforsch.,13a, 423 (1958).Google Scholar
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    D. B. Holt, in: Defects in Semiconductor Crystals [Russian translation], Mir, Moscow (1969), p. 100.Google Scholar

Copyright information

© Plenum Publishing Corporation 1976

Authors and Affiliations

  • T. S. Gertovich
    • 1
    • 2
  • S. I. Grineva
    • 1
    • 2
  • I. V. Mel'nichuk
    • 1
    • 2
  • I. M. Rarenko
    • 1
    • 2
  • S. A. Khramtsova
    • 1
    • 2
  1. 1.Chernovtsy State UniversityUSSR
  2. 2.Kiev Institute of SemiconductorsAcademy of Sciences of the Ukrainian SSRUSSR

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