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“Defect” states of channeling electrons

  • Plasma Physics
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Soviet Physics Journal Aims and scope

Abstract

We develop a theory of quantum states caused by defects of the crystal lattice during planar channeling of electrons. Points defects are considered. We obtain expressions for the wave function and the transverse energy of the “defect” states and make estimates for {110} planar channeling in silicon by electrons with energies of 1–10 MeV. Substitutional, interstitial, and vacancy impurity atoms are examined. We propose using properties of the electromagnetic radiation of electrons in defect states for diagnostics of single crystals.

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Authors and Affiliations

  1. Kostroma Agricultural Institute, USSR

    D. E. Popov, S. D. Pavlov & S. E. Savushkin

Authors
  1. D. E. Popov
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  2. S. D. Pavlov
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  3. S. E. Savushkin
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp.68–72, April, 1990.

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Popov, D.E., Pavlov, S.D. & Savushkin, S.E. “Defect” states of channeling electrons. Soviet Physics Journal 33, 339–343 (1990). https://doi.org/10.1007/BF00894217

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  • DOI: https://doi.org/10.1007/BF00894217

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