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Structure of the depletion region and the current-voltage characteristics of metal-semiconductor contacts with ohmic incorporations

  • Physics of Semiconductors and Dielectrics
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Literature cited

  1. V. I. Strikha and E. V. Buzaneva, Physical Foundations of Metal-Semiconductor Contact Reliability in Integrated Electronics [in Russian], Radio i Svyaz', Moscow (1987).

    Google Scholar 

  2. B. A. Bezborodnikov, A. N. Korol', and D. I. Sheka, Semiconductor Devices with Schottky Barriers [in Russian], Naukova Dumka, Kiev (1979).

    Google Scholar 

  3. O. T. Gavrilov and I. I. Kvyatkevich, Élektron. Tekh., Ser. 2, No. 7 (158), 3–6 (1982).

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  4. F. D. Gakhov, Boundary Problems [in Russian], Nauka, Moscow (1977).

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  5. M. Abramovich and I. Stigun (eds.), Handbook of Special Functions [in Russian], Nauka, Moscow (1979).

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 21–25, April, 1990.

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Avramenko, V.A., Kuznetsov, G.V., Strikha, V.I. et al. Structure of the depletion region and the current-voltage characteristics of metal-semiconductor contacts with ohmic incorporations. Soviet Physics Journal 33, 297–301 (1990). https://doi.org/10.1007/BF00894206

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  • DOI: https://doi.org/10.1007/BF00894206

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