Abstract
Photosensitive rectifying heterostructures were prepared based on single crystals of p-CdSiAs2 doped with group-III impurities by depositing In2O3 layers. It was established that the slope of the long-wave edge of the photosensitivity of the obtained structures decreases as the CdSiAs2 hole concentration increases. Based on polarization investigations of the photocurrent, a conclusion is drawn concerning the possibilities for practical application of diode structures in polarization photoelectronics.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 12–15, April, 1990.
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Rud', V.Y., Rud', Y.V. & Serginov, M. Photoelectric properties of In2O3-CdSiAs2 structures. Soviet Physics Journal 33, 289–291 (1990). https://doi.org/10.1007/BF00894204
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DOI: https://doi.org/10.1007/BF00894204