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Microwave measurement of the permittivity of ferroelectric films by electrodeless and coplanar waveguide methods

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

Ferroelectric films on dielectric substrates prepared by reactive rf sputtering have been studied. The temperature and external electric field dependencies of the permittivity of the films are deduced. It is shown that deposition of metallic electrodes onto the surface of the film leads to an increase in the permittivity and to an enhancement of the dependency of ɛ on temperature and the external electric field. The observed effects may be explained by the formation of an electrode-film interface layer.

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Authors and Affiliations

  1. Scientific-Research Institute at the State University, Rostov-on-Don

    S. V. Orlov & A. D. Levin

Authors
  1. S. V. Orlov
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  2. A. D. Levin
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 8–12, April, 1990.

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Orlov, S.V., Levin, A.D. Microwave measurement of the permittivity of ferroelectric films by electrodeless and coplanar waveguide methods. Soviet Physics Journal 33, 286–289 (1990). https://doi.org/10.1007/BF00894203

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  • DOI: https://doi.org/10.1007/BF00894203

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