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Effect ofγ radiation on the electrical properties of the Al-Si3N4-Al system

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Literature cited

  1. G. A. Vorob'ev et al., Izv. Vyssh. Uchebn. Zaved., Fiz., No. 6, 160 (1970).

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  2. A. S. Belanovskii and G. D. Baranov, Obzory po Élektronnoi Tekhnike, Ser. Poluprovodnikove Pribory, 15 (1968).

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  4. V. M. Nekrasov and L. I. Dadeko, Proc. Confer. on Physics of Dielectrics and Outlook for Further Developments [in Russian], Vol. 3, Leningrad (1973), p. 88.

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Authors and Affiliations

  1. Institute of Radioelectronics and Automatic Control Systems, Tomsk

    Yu. A. Burachevskii

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  1. Yu. A. Burachevskii
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 124–126, May, 1975.

In conclusion, the author thanks Professor G. A. Vorob'ev and Lecturer Yu. B. Yankelevich for their valuable comments on this report, and V. A. Burdovitsin for preparing the dielectric film specimens.

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Burachevskii, Y.A. Effect ofγ radiation on the electrical properties of the Al-Si3N4-Al system. Soviet Physics Journal 18, 707–708 (1975). https://doi.org/10.1007/BF00894011

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  • DOI: https://doi.org/10.1007/BF00894011

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