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Long-wave optical absorption in electron-bombarded GaAs

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Abstract

The absorption spectra of n- and p-type GaAs bombarded with 2-MeV electrons at T=300‡K were studied in the spectral range from 0.2 eV to Eg. It was found that “shallow” radiation-defect levels ≈Ec − 0.01 eV and ≈Ec + (0.06−0.1) eV were formed. The “structureless” character of the absorption in the region hΝ < Eg in electron-bombarded gallium arsenide specimens was shown to be due to the distinctive features of photoionization of deep levels and the strong electron-phonon interaction in this material.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    V. N. Brudnyi, D. L. Budnitskii, M. A. Krivov & E. A. Popova

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  1. V. N. Brudnyi
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  2. D. L. Budnitskii
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  3. M. A. Krivov
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  4. E. A. Popova
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 93–97, July, 1981.

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Brudnyi, V.N., Budnitskii, D.L., Krivov, M.A. et al. Long-wave optical absorption in electron-bombarded GaAs. Soviet Physics Journal 24, 663–666 (1981). https://doi.org/10.1007/BF00893905

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  • DOI: https://doi.org/10.1007/BF00893905

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