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Change in the magnetoresistance of n-GaAs in an electric field

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Abstract

The effect of an electric field on the magnitude of the magnetoresistance in epitaxial n-GaAs films with free carrier concentrations ne=4.0.1015−1.12. 1016 cm−3 at T=4.2‡K was investigated. It was found that in weak electric and magnetic fields for E < Eb (Eb is the intensity of the low-temperature impurity breakdown field) the magnetoresistance (MR) is negative, and for E≥Eb only a positive magnetoresistance is observed. The experimental results are explained by a change in the concentration of centers with a magnetic moment and of electrons in the impurity band in prebreakdown electric fields.

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Authors and Affiliations

  1. V. I. Lenin Belorussian State University, USSR

    M. G. Lukashevich & V. F. Stel'makh

Authors
  1. M. G. Lukashevich
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  2. V. F. Stel'makh
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 51–55, July, 1981.

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Lukashevich, M.G., Stel'makh, V.F. Change in the magnetoresistance of n-GaAs in an electric field. Soviet Physics Journal 24, 623–626 (1981). https://doi.org/10.1007/BF00893894

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  • DOI: https://doi.org/10.1007/BF00893894

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