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Spatial resolution of a microwave cavity method of measuring the specific resistivity of semiconductors

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Abstract

The problem of semiconductor polarization by the electrical field of the ring gap of a quasistatic cavity used to measure the parameters of semiconductor materials is solved. It is shown that the spatial resolution of the method is determined by the radius of the measuring orifice.

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Literature cited

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    M. V. Detinko, Yu. V. Medvedev & A. S. Petrov

Authors
  1. M. V. Detinko
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  2. Yu. V. Medvedev
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  3. A. S. Petrov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 60–64, January, 1982.

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Detinko, M.V., Medvedev, Y.V. & Petrov, A.S. Spatial resolution of a microwave cavity method of measuring the specific resistivity of semiconductors. Soviet Physics Journal 25, 58–62 (1982). https://doi.org/10.1007/BF00893877

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  • DOI: https://doi.org/10.1007/BF00893877

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