Abstract
The layered growth and doping of silicon crystal is investigated on the basis of the kinetic theory of crystal growth. The density of atomic sticking sites on a (110) oriented Si surface is determined. The nonlinear dependences of the doping impurity concentration in the growing crystal on its concentration in the source (the density of the impurity atomic beam), the crystal growth rate, and the growth temperature are derived. The theoretical doping characteristics of silicon with phosphor are found to be in good agreement with the experimental data.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 24–28, January, 1982.
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Perov, A.S., Postnikov, V.V. Doping characteristics of silicon crystal grown from an atomic beam in vacuum. Soviet Physics Journal 25, 22–25 (1982). https://doi.org/10.1007/BF00893867
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DOI: https://doi.org/10.1007/BF00893867