Abstract
The stratified growth of an ideal crystal with diamond structure from an atomic beam in a vacuum is investigated by using the kinetic method of the theory of crystal growth. Equations are obtained to determine the mean concentrations ρn of molecules consisting of n atoms on the (110) surface of the crystal. In the stationary case, an approximate analytic solution is obtained with a nonlinear dependence of ρ1, ρ2, and\(N = \sum\limits_{n = 3}^\infty {\rho _n } \) on the atomic beam density.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 92–96, Decmeber, 1981.
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Perov, A.S. Surface (110) of elementary semiconductors with diamond-type structure during stratified growth from an atomic beam in a vacuum. Soviet Physics Journal 24, 1154–1158 (1981). https://doi.org/10.1007/BF00893747
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DOI: https://doi.org/10.1007/BF00893747