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Energy band structure of CdSnAs2 and CdGeAs2

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Abstract

The energy band structure of CdSnA2 and CdGeAs22 is calculated by the empirical-pseudopotential method, taking account of spin-orbital interaction. The calculated parameters − Eg = 0.25, Δcr = 0.05, Δs.o = 0.44 for CdSnAs2 and Eg = 0.55, Δcr = 0.20, and Δs.o = 0.33 for CdGeAs2 (all in eV) — are in good agreement with experiment. The conclusion drawn in a series of experimental works that there are additional minima close to the bottom of the CdSnAs2 conduction band is not confirmed in the calculation.

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Authors and Affiliations

  1. Kemerovskii State University, USSR

    Yu. I. Polygalov & A. S. Poplavnoi

Authors
  1. Yu. I. Polygalov
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  2. A. S. Poplavnoi
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 78–82, December, 1981.

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Polygalov, Y.I., Poplavnoi, A.S. Energy band structure of CdSnAs2 and CdGeAs2 . Soviet Physics Journal 24, 1139–1142 (1981). https://doi.org/10.1007/BF00893743

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  • DOI: https://doi.org/10.1007/BF00893743

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