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The effect of adsorbed impurities on the surface properties of GaAs and the characteristics of electroluminescent p-n junctions

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Abstract

The effect of adsorbed copper and gold on the band bending, the steady-state photoconductivity, and the field-effect mobility in n-type GaA s has been studied. The light and electrical characteristics of electroluminescent p-n junctions have also been studied. It is shown that doping the GaA s surface with Cu and Au leads to an increase of the depleting band bending and to a decrease in the field-effect mobility. Copper, adsorbed at the surface of slices before diffusion, leads to a reduction of the radiative intensity of the p-junctions prepared on GaA s with an electron concentration of 1–6·1017 cm−3, to a decrease in the cutoff voltage, and to an increase in the differential resistance of the forward branch of the volt-ampere characteristics. It is proposed that in the region of the experimental current (5·10−2-10−2) mA the presence of Cu in the electroluminescent p-n junctions leads not to a change in the injection mechanism but to an increase in the series resistance of the p-n junction.

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Authors and Affiliations

  1. V. V. Kuibyshev Tomsk State University, USSR

    V. A. Minaeva, Yu. K. Panteleev & N. L. Dmitruk

Authors
  1. V. A. Minaeva
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  2. Yu. K. Panteleev
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  3. N. L. Dmitruk
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Translated from Izvestiya VUZ. Fizika, No. 12, pp. 72–77, December, 1973.

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Minaeva, V.A., Panteleev, Y.K. & Dmitruk, N.L. The effect of adsorbed impurities on the surface properties of GaAs and the characteristics of electroluminescent p-n junctions. Soviet Physics Journal 16, 1683–1687 (1973). https://doi.org/10.1007/BF00893661

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  • DOI: https://doi.org/10.1007/BF00893661

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