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The photo-emf in GaAs p-n junctions produced by natural recombination radiation

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Literature cited

  1. V. D. Okunev, V. I. Gaman, B.G. Zakharov, R. K. Zayatinov, and S. S. Khludkov, Materials of the All-Union Conference on Structural Defects in Semiconductors [in Russian], Novosibirsk (1969), p. 344.

  2. G. E. Pikus, Basic Semiconductor Device Theory [in Russian], Nauka, Moscow (1965).

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  3. R. Kalibjian and K. Mayeda, Solid State Electron.,12, 823 (1969).

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk University, USSR

    V. D. Okunev & V. I. Gaman

Authors
  1. V. D. Okunev
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  2. V. I. Gaman
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 138–139, January, 1973.

In conclusion, the authors wish to express their thanks to O. A. Matveev for his evaluation of the study, to B. G. Zakharov for his interest in the work, to L. A. Khlestovaya for help in measurements, and to U. M. Kulish for providing the epitaxial p-n jtmct~ons.

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Okunev, V.D., Gaman, V.I. The photo-emf in GaAs p-n junctions produced by natural recombination radiation. Soviet Physics Journal 16, 111–113 (1973). https://doi.org/10.1007/BF00893356

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  • DOI: https://doi.org/10.1007/BF00893356

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