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Study of the diffusion of gallium and arsenic into germanium during the epitaxial growth of gallium arsenide on the latter

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Abstract

The distribution of gallium and arsenic atomc (as well as the carrier distribution) in the diffusion layer of a germanium surface subjected to the epitaxial growth of gallium arsenide is examined. It is found that the nature of the p-n junction formed in the germanium is determined by the diffusion of gallium as well as arsenic; gallium exhibits an anomalously high rate of diffusion in germanium.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk University, USSR

    L. E. Épiktetova, L. P. Vasil'eva, I. F. Druzhinkin, V. A. Moskovkin & L. G. Lavrent'eva

Authors
  1. L. E. Épiktetova
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  2. L. P. Vasil'eva
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  3. I. F. Druzhinkin
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  4. V. A. Moskovkin
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  5. L. G. Lavrent'eva
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 93–99, January, 1973.

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Épiktetova, L.E., Vasil'eva, L.P., Druzhinkin, I.F. et al. Study of the diffusion of gallium and arsenic into germanium during the epitaxial growth of gallium arsenide on the latter. Soviet Physics Journal 16, 72–76 (1973). https://doi.org/10.1007/BF00893345

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  • DOI: https://doi.org/10.1007/BF00893345

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