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Alloying of solid solutions during liquid-phase epitaxy

II. Gallium aluminum antimonide

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Abstract

The carrier concentration in layers of AlxGa1−xSb solid solutions has been studied. A layer was obtained by liquid-phase epitaxy and alloyed with Zn, Si, Ge, Sn, and Pb. It has been shown that these admixtures are acceptors in AlxGa1−xSb. The ratio of the hole concentration to the admixture concentration in the liquid phase drops as x increases and, for group IV elements, as the atomic number of the element increases. Calculation of the distribution coefficients by the expressions obtained in Part I of this study made it possible to explain the results.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, USSR

    A. A. Vilisov, V. P. Germogenov, F. S. Kim & L. E. Épiktetova

Authors
  1. A. A. Vilisov
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  2. V. P. Germogenov
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  3. F. S. Kim
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  4. L. E. Épiktetova
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 15–21, July, 1977.

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Vilisov, A.A., Germogenov, V.P., Kim, F.S. et al. Alloying of solid solutions during liquid-phase epitaxy. Soviet Physics Journal 20, 841–847 (1977). https://doi.org/10.1007/BF00893124

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  • DOI: https://doi.org/10.1007/BF00893124

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