Calculation of trap parameters from thermally stimulated photoconduction data


The example of n-type CdTe∶Ge crystals is used to consider the scope for determining trap-ping-center parameters for photosensitive semiconductor crystals on the basis of the conditions for peaks in thermally stimulated photoconduction curves for two different states of initial trap filling. Equations are derived for the parameters of the trapping levels and the recombination levels.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 111–115, July, 1976.

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Zayachkivskii, V.P., Beisyuk, P.P., Nikonyuk, E.S. et al. Calculation of trap parameters from thermally stimulated photoconduction data. Soviet Physics Journal 19, 921–924 (1976).

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  • Recombination
  • Semiconductor Crystal
  • Trapping Level
  • Trap Parameter
  • Recombination Level