Calculation of trap parameters from thermally stimulated photoconduction data

Abstract

The example of n-type CdTe∶Ge crystals is used to consider the scope for determining trap-ping-center parameters for photosensitive semiconductor crystals on the basis of the conditions for peaks in thermally stimulated photoconduction curves for two different states of initial trap filling. Equations are derived for the parameters of the trapping levels and the recombination levels.

This is a preview of subscription content, access via your institution.

Literature cited

  1. 1.

    P. G. Litovchenko and V. N. Ust'yanov, in: Current Aspects of Semiconductor-Device Physics [in Russian], Mintis, Vilnius (1969), p. 153.

  2. 2.

    G. A. Dussel and R. H. Bube, Phys. Rev.,155, 764 (1967).

    Google Scholar 

  3. 3.

    O. Daniyarov and O. V. Lyubchenko, Ukr. Fiz. Zh.,19, 15 (1974).

    Google Scholar 

  4. 4.

    É. N. Adirovich, Aspects of Crystal-Luminescence Theory [in Russian], GFTTL (1951).

  5. 5.

    E. S. Nikonyuk, A. V. Savitskii, O. A. Parfenyuk, I. P. Chiokan, and V. P. Zayachkivskti, Fiz. Tekh. Poluprovodn.,9, 1398 (1975).

    Google Scholar 

Download references

Author information

Affiliations

Authors

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 111–115, July, 1976.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Zayachkivskii, V.P., Beisyuk, P.P., Nikonyuk, E.S. et al. Calculation of trap parameters from thermally stimulated photoconduction data. Soviet Physics Journal 19, 921–924 (1976). https://doi.org/10.1007/BF00892916

Download citation

Keywords

  • Recombination
  • Semiconductor Crystal
  • Trapping Level
  • Trap Parameter
  • Recombination Level