Abstract
The dependence of the quantum yield and photocurrent density on Light frequency is theoretically studied for various orientations of the emission surface for the semiconductor model with simple cubic lattice and s-like valence band and p-like conduction band, and it is assumed that electron photoexcitation occurs due to indirect optical transitions.
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R. I. Iglamova and S. V. Izmailov, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 3, 134 (1976).
A. I. Ansel'm, Introduction to Semiconductor Theory [in Russian], Moscow-Leningrad (1962).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 100–104, August, 1977.
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Iglamova, R.I., Izmailov, S.V. Calculation of photoemission characteristics for a semiconductor model with s-like valence band and p-like conduction band. Soviet Physics Journal 20, 1063–1066 (1977). https://doi.org/10.1007/BF00892837
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DOI: https://doi.org/10.1007/BF00892837