Abstract
The redistribution of boron in silicon under the action of elastic stress fields created by the diffusion of various impurities is investigated experimentally. It is shown that the diffusion of boron slows down in the elastic compression interval. The slowing effect intensifies with increasing absolute stress values. A model is proposed to account qualitatively for the experimental results.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 124–127, June, 1977.
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Panteleev, V.A., Gugina, T.S. & Leonov, V.N. Influence of elastic stress fields on the diffusional redistribution of impurities in silicon. Soviet Physics Journal 20, 798–801 (1977). https://doi.org/10.1007/BF00892769
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DOI: https://doi.org/10.1007/BF00892769