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Soviet Physics Journal

, Volume 20, Issue 6, pp 766–769 | Cite as

Photoexcitation of emission currents in a metal-insulator-semiconductor system

  • F. M. Benson
  • A. A. Miller
  • A. N. Shaposhnikov
  • Yu. B. Yankelevich
Article
  • 16 Downloads

Abstract

The current-voltage characteristics of the transmitted and emitted current were investigated under photoexcitation conditions in metal-insulator-semiconductor systems Sin-Si3N4-Al and SipSin-Si3N4-Al. The laws governing the current flow are analyzed and the region where there is proportional conversion of a light signal into a free-electron flux is defined.

Keywords

Current Flow Light Signal Emission Current Photoexcitation Condition Proportional Conversion 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1978

Authors and Affiliations

  • F. M. Benson
    • 1
  • A. A. Miller
    • 1
  • A. N. Shaposhnikov
    • 1
  • Yu. B. Yankelevich
    • 1
  1. 1.Tomsk Institute of Automation, Control, and RadioelectronicsUSSR

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