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Soviet Physics Journal

, Volume 18, Issue 9, pp 1258–1264 | Cite as

Micromorphology of auto-epitaxial layers of gallium arsenide

I. Influence of orientation and alloying admixture (Zn)
  • L. G. Lavrent'eva
  • I. V. Ivonin
  • L. M. Krasil'nikova
  • L. P. Porokhovnichenko
Article
  • 10 Downloads

Abstract

The influence of the crystallographic orientation of a substrate and alloying admixture (Zn) on the micromorphology of the growth surface of auto-epitaxial layers of GaAs is investigated. Features of the growth mechanism for layers of different orientations are discussed based on the resulting data and the influence of an admixture on the characteristics of the graduated-layer relief is considered.

Keywords

GaAs Gallium Growth Mechanism Crystallographic Orientation Arsenide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1976

Authors and Affiliations

  • L. G. Lavrent'eva
    • 1
  • I. V. Ivonin
    • 1
  • L. M. Krasil'nikova
    • 1
  • L. P. Porokhovnichenko
    • 1
  1. 1.V. D. Kuznetsov Siberian Physics and Engineering InstituteTomsk State UniversityUSSR

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