Effect of alloying conditions on the structure of ohmic contacts to gallium arsenide
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The distribution of elements in the area of a contact to gallium arsenide has been studied for various alloying conditions by the secondary ion-ion emission method. The phase and structural state of the contact before and after alloying has been investigated by x-ray structural and electron-microscopic methods. The relation between the distribution of elements in the layer and the electrical resistance of the contact is demonstrated.
KeywordsGallium Structural State Ohmic Contact Arsenide Gallium Arsenide
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- 1.M. E. Levinshtein and M. S. Shur, Zarubezhnaya Radioélektronika, No. 11, 50 (1970).Google Scholar
- 2.T. Hasby, R. Starborn, and E. L. Jones, J. Appl. Phys.,39, 4623 (1963).Google Scholar
- 3.V. N. Ivanov, V. S. Sopur, and G. N. Kompanets, Élektronnaya Tekhnika, Mikroélectronika, Ser. VI, No. 1 (1971).Google Scholar
- 4.H. Salow and E. Grobe, Z. Angew. Phys.,25, No. 3, 137 (1968).Google Scholar
- 5.A. M. Misik, A. P. Vyatkin, and I. F. Druzhinkin, Izv. Vyssh. Uchebn. Zaved., SSSR, Fizika, No. 9, 155 (1971).Google Scholar
- 6.M. A. Vasil'ev, S. P. Chenakin, and V. T. Cherenin, in: The Preparation and Properties of Thin Films [in Russian], No. 2, ONTIIPM AN UkrSSR, Kiev (1975), p. 16.Google Scholar
- 7.R. I. Jaffee, J. Member, and B. W. Gonser, Trans. AIME,166, 436 (1946).Google Scholar