Skip to main content
SpringerLink
Log in

Investigation of anisotropic effects in vapor epitaxy of indium arsenide. I. Anistropy of growth rate and surface microrelief

  • Published:
Soviet Physics Journal Aims and scope

Abstract

Kinetic (growth rate), optical, and electron-microscopic (surface relief) studies were made of the process of formation of homoepitaxial films of InAs in a chloride gas-transport system. It was found that the (111)A and B surfaces of indium arsenide and their vicinals grew by the step-layer mechanism, whereas the (001) surfaces and those inclined from them grew by the normal growth mechanism. Two types of defect were observed on the growth surface of homoepitaxial InAs films: a) defects nucleated on the substrate; b) humps formed on the surface during the final stage of the process.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Literature cited

  1. L. G. Lavrent'eva, V. D. Dedkov, N. N. Bakin, and V. A. Ermolaev, in: Gallium Arsenide [in Russian], No. 2, Tomsk State University (1969), p. 185.

  2. L. G. Lavrent'eva, I. V. Ivonin, L. M. Krasil'nikova, and L. P. Porokhovnichenko, Izv. Vyssh. Uchebn. Zaved. Fiz., No. 9, 58 (1975).

    Google Scholar 

  3. L. G. Lavrent'eva, I. V. Ivonin, L. M. Krasil'nikova, and L. P. Porokhovnichenko, in: Growth and Doping of Semiconductor Crystals in Films [in Russian], Part II, Nauka, Novosibirsk (1977), p. 84.

    Google Scholar 

  4. D. W. Shaw, J. Electrochem. Soc.,115, 405 (1968).

    Google Scholar 

  5. L. Hollan and C. Schiller, J. Cryst. Growth.,13–14, 319 (1972).

    Google Scholar 

  6. O. Mizuno, H. Watanabe, and D. Shinoda, Jpn. Appl. Phys.,14, 2, 184 (1975).

    Google Scholar 

  7. G. A. Aleksandrova, E. H. Dorskaya, G. F. Lymar', L. V. Marchukov, and A. E. Shubin, in: Growth and Doping of Semiconductor Crystals in Films [in Russian], Part I, Nauka, Novosibirsk (1977), p. 45.

    Google Scholar 

  8. I. M. Skvortsov, G. A. Aleksandrova, and P. B. Pashchenko, Kristallografiya,23, 3, 664 (1978).

    Google Scholar 

  9. D. Shaw, in: Crystal Growth (ed. C. Goodman) [Russian translation], No. 1, Mir, Moscow (1977), p. 11.

    Google Scholar 

  10. R. Cadoret, L. Hollan, J. B. Loyau, M. Oberlin, and A. Oberlin, J. Cryst. Growth,29, 2, 187 (1975).

    Google Scholar 

  11. L. G. Lavrent'eva, L. P. Porokhovnichenko, I. V. Ivonin, L. M. Krasil'nikova, and N. N. Ivanova, Izv. Vyssh. Uchebn. Zaved. Fiz., No. 1, 20 (1974).

    Google Scholar 

  12. I. V. Ivonin, L. M. Krasil'nikova, L. G. Lavrent'eva, and G. F. Lymar', Izv. Vyssh. Uchebn. Zaved. Fiz., No. 6, 115 (1979).

    Google Scholar 

  13. S. A. Grinberg, in: Crystal Growth [in Russian], Vol. 10, Nauka, Moscow (1974), p. 176.

    Google Scholar 

  14. L. M. Krasil'nikova, I. V. Ivonin, L. V. Masarnovskii, L. N. Sysoeva, and M. P. Yakubenya, Izv. Vyssh. Uchebn. Zaved. Fiz., No. 8, 19 (1975).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

    G. A. Aleksandrova, I. V. Ivonin, L. M. Krasil'nikova, L. F. Lavrent'eva, A. E. Shubin & M. P. Yakubenya

Authors
  1. G. A. Aleksandrova
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. I. V. Ivonin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. L. M. Krasil'nikova
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. L. F. Lavrent'eva
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. E. Shubin
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. M. P. Yakubenya
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 71–75, September, 1980.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Aleksandrova, G.A., Ivonin, I.V., Krasil'nikova, L.M. et al. Investigation of anisotropic effects in vapor epitaxy of indium arsenide. I. Anistropy of growth rate and surface microrelief. Soviet Physics Journal 23, 813–817 (1980). https://doi.org/10.1007/BF00892532

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00892532

Keywords

Search

Navigation