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Influence of crystallization temperature on the structure of growth surfaces of epitaxial gallium arsenide layers in the system GaAs-AsCl3-H2

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

Conclusions

Thus, joint analysis of data on the growth rate and the structure of the growth surface of epitaxial GaAs layers made it possible to obtain quantitative characteristics of the surface processes (tangential velocity of steps, average diffusion length of adsorbed particles, reaction time at a kink, density and average height of growth steps) and their dependence on the deposition temperature. The absence of qualitative changes in the microrelief in the passage from region I to region II [1] confirms that the two ranges of temperatures are kinetic while the motion of the growth steps is controlled by surface processes. For the 〈111〉A pole this consists primarily of surface-diffusion limitations while for the 〈111〉B consists of limitations on the reaction rate at the steps.

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Literature cited

  1. L. G. Lavrent'ev, V. G. Ivanov, I. V. Ivonin, V. A. Moskovkin, and S. E. Toropov, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 9, 101 (1982).

    Google Scholar 

  2. L. G. Lavrent'eva, S. E. Moskovkin, and I. V. Ivonin, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 3, 89 (1981).

    Google Scholar 

  3. A. A. Chernov, in: Modern Crystallography [in Russian],3, Nauka, Moscow (1980), pp. 7–323.

    Google Scholar 

  4. C. H. Van den Brekel and A. K. Jansen, J. Cryst. Growth,43, 364 (1978).

    Google Scholar 

  5. L. G. Lavrent'eva, I. V. Ivonin, and L. P. Porokhovnichenko, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 12, 24 (1977).

    Google Scholar 

  6. R. Cadoret and M. Cadoret, J. Cryst. Growth,31, 142 (1975).

    Google Scholar 

  7. L. G. Lavrent'eva, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 1, 23 (1980).

    Google Scholar 

  8. L. G. Lavrent'eva, Kristallografiya,24, 1273 (1980).

    Google Scholar 

  9. L. G. Lavrent'eva, I. V. Ivonin, and L. P. Porokhovnichenko, in: Crystal Growth [in Russian],13, Nauka, Moscow (1980), p. 33.

    Google Scholar 

  10. Chemical Bond-Breaking Energy. Ionization Potentials and Electron Affinity. A Handbook [in Russian], Nauka, Moscow (1974).

  11. A. A. Chernov and M. P. Ruzaikin, in: Crystal Growth [in Russian],13, Nauka, Moscow (1980), p. 20.

    Google Scholar 

  12. N. Cabrera and R. V. Coleman, in: Theory and Practice of Crystal Growing [Russian translation], Metallurgiya, Moscow (1968), p. 9.

    Google Scholar 

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, USSR

    L. G. Lavrent'eva, V. G. Ivanov, I. V. Ivonin & V. A. Moskovkin

Authors
  1. L. G. Lavrent'eva
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  2. V. G. Ivanov
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  3. I. V. Ivonin
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  4. V. A. Moskovkin
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 105–108, September, 1982.

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Lavrent'eva, L.G., Ivanov, V.G., Ivonin, I.V. et al. Influence of crystallization temperature on the structure of growth surfaces of epitaxial gallium arsenide layers in the system GaAs-AsCl3-H2 . Soviet Physics Journal 25, 863–867 (1982). https://doi.org/10.1007/BF00892411

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  • DOI: https://doi.org/10.1007/BF00892411

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