Conclusions
Thus, consideration of the temperature dependences of the growth rate of singular and vicinal GaAs faces made it possible to determine the activation energy of the growth process in the kinetic region, to demonstrate the changes in the activation energy on passing from singular to vicinal faces, to estimate the magnitude of these changes, and also to analyze some distinctive features of the crystallization process which are related to the crystal chemistry of growing planes. The growth of GaAs epitaxial layers near the <111>B and <001> poles over a wide range of deposition temperatures is limited by the rate of the surface stage while for layers grown on substrates near the <111>A and <110> poles at high temperatures a significant role is played by outward-diffusion limitations which are associated primarily with the arsenic supply.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
Literature cited
D. W. Shaw, J. Electrochem Soc.,115, 405 (1968).
L. G. Lavrent'eva,Kristallografiya,24, 1273 (1980);26 (1982).
L. G. Lavrent'eva, L. P. Porokhovnichenko, and O. M. Ivleva, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 6, 54 (1976).
L. G. Lavrent'eva, I. V. Ivonin, and L. P. Porokhovnichenko, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 12, 24 (1977).
L. G. Lavrent'eva, V. A. Moskovkin, and I. V. Ivonin, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 3, 89 (1981).
L. G. Lavrent'eva, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 1, 23 (1980).
H. Watanabe and J. Seki, J. Cryst. Growth,24/25, 220 (1974).
H. Watanabe, Jpn. J. Appl. Phys.,10, 1451 (1975).
D. W. Shaw, J. Electrochem. Soc.,117, 683 (1970).
D. W. Shaw, J. Cryst. Growth,8, 117 (1971).
D. W. Kirwan, J. Electrochem. Soc.,117, 1572 (1970).
D. W. Shaw, in: Crystal Growth [Russian translation],1, Mir, Moscow (1977), p. 11.
L. Hollan, J. M. Durand, and R. Cadoret, J. Electrochem. Soc.,124, 135 (1977).
G. A. Gurchenok, Izv. Akad. Nauk SSSR, Neorg. Mater.,12, 2099 (1980).
N. A. Testova, G. A. Kokovin, and F. A. Kuznetsov, in: Abstracts Fourth All-Union Conf. on Gallium Arsenide Investigations [in Russian], Izd. Tomsk. Gos. Univ., Tomsk (1978), p. 193.
Author information
Authors and Affiliations
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii., Fizika, No. 9, pp. 101–104, September, 1982.
Rights and permissions
About this article
Cite this article
Lavrent'eva, L.G., Ivanov, V.G., Ivonin, I.V. et al. Influence of crystallization temperature on growth rate of epitaxial gallium arsenide layers in the system GaAs-AsCl3-H2 . Soviet Physics Journal 25, 859–862 (1982). https://doi.org/10.1007/BF00892410
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00892410