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Character and energy spectrum of surface recombination centers in silicon

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

We have investigated changes in the rates of surface recombination and capture by fast states in silicon during adsorption and dehydration of the surface. The data are interpreted by treating the surface as a disordered system.

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Authors and Affiliations

  1. M. V. Lomonosov Moscow State University, USSR

    V. I. Grinev, S. N. Karyagin, V. F. Kiselev & I. O. Ogloblin

Authors
  1. V. I. Grinev
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  2. S. N. Karyagin
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  3. V. F. Kiselev
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  4. I. O. Ogloblin
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 94–97, September, 1982.

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Grinev, V.I., Karyagin, S.N., Kiselev, V.F. et al. Character and energy spectrum of surface recombination centers in silicon. Soviet Physics Journal 25, 851–854 (1982). https://doi.org/10.1007/BF00892408

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  • DOI: https://doi.org/10.1007/BF00892408

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