Skip to main content
SpringerLink
Log in

Electron affinity for intrinsic semiconductors

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

An approach for estimating the electron affinity using the method of dielectric formalism is developed. It is shown that the volume component of the electron affinity is related to the formation of exchange-correlation holes in the valence band. The interaction of an electron with this hole on the surface is responsible for the surface component. The relation obtained agrees satisfactorily with the rather meager experimental data available for semiconductors, and enables the electron affinity to be estimated for polycrystalline semiconductors for which there is no reference data. The calculation is carried out for 14 well-known semiconductors. In the case of metals, the relations obtained give the work function of the electron, which agrees, with a relative error of up to ±30%, with experimental data for the majority of elements.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Literature cited

  1. M. B. Pastenskii, Usp. Fiz. Nauk,128, 69 (1979).

    Google Scholar 

  2. I. Sanchez-Debesa and F. Flores, Solid State Commun.,35, 815 (1980).

    Google Scholar 

  3. D. Pines and P. Nozieres, Theory of Quantum Liquids, Vol. 1: Normal Fermi Liquids, W. A. Benjamin (1966).

  4. C. H. Chen, A. E. Meixner, and B. M. Kincaid, Phys. Rev. Lett.,44, 951 (1980).

    Google Scholar 

  5. N. N. Petrov, Zh. Tekh. Fiz.41, 2473 (1971).

    Google Scholar 

  6. D. A. Kirzhnits, Field Methods in Many-Particle Theory [in Russian], Atomizdat, Moscow (1963).

    Google Scholar 

  7. D. Pines, Elementary Excitation in Solids, W. A. Benjamin (o963).

  8. N. A. Levrent'ev and B. V. Shabat, Methods of the Theory of Functions of a Complex Varia- ble [in Russian], Nauaka, Moscow (1965).

    Google Scholar 

  9. F. Plattsman and P. Vol'f, Waves and Interactions in a Solid-State Plasma [in Russian], Mir, Moscow (1975).

    Google Scholar 

  10. Yu. S. Barash and V. L. Ginzburg, Usp. Fiz. Nauk,116, 5 (1975).

    Google Scholar 

  11. E. A. Bakulin and M. M. Bredov, Fiz. Tverd. Tela,19, 891 (1977).

    Google Scholar 

  12. H. B. Michaelson, J. Appl. Phys.48, 4729 (1977).

    Google Scholar 

  13. V. S. Fomenko and J. A. Podchernyaeva, Emission and Absorption Properties of Materials [in Russian], Atomizdat, Moscow (1975).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Moscow Institute of Electronic Techniques, USSR

    V. K. Nevolin

Authors
  1. V. K. Nevolin
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 76–80, 1982.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Nevolin, V.K. Electron affinity for intrinsic semiconductors. Soviet Physics Journal 25, 835–838 (1982). https://doi.org/10.1007/BF00892403

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00892403

Keywords

Search

Navigation