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Optoelectric effect in ferromagnetic semiconductors

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

A theoretical investigation is carried out of the optoelectric effect in degenerate ferromagnetic semiconductors. This effect is due to s-d-exchange interaction between the carriers and the magnetic atoms, and is determined by the nonlinear dc current, proportional to the product of the alternating electric and magnetic fields of the light. It is shown that the effect is proportional to the s-d-exchange energy, and the square of the wave vector of the alternating magnetic field.

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Authors and Affiliations

  1. Gor'kii Physicotechnical Institute, USSR

    G. M. Genkin & N. G. Golubeva

  2. N. I. Lobachevskii Gor'kii State University, USSR

    G. M. Genkin & N. G. Golubeva

Authors
  1. G. M. Genkin
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  2. N. G. Golubeva
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 9, pp. 73–76, 1982.

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Genkin, G.M., Golubeva, N.G. Optoelectric effect in ferromagnetic semiconductors. Soviet Physics Journal 25, 832–834 (1982). https://doi.org/10.1007/BF00892402

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  • DOI: https://doi.org/10.1007/BF00892402

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