Skip to main content
SpringerLink
Log in

Effect of residual radiation-induced defects on characteristics of ion-implanted gallium arsenide p-n junctions

  • Brief Communications and Letters to the Editor
  • Published:
Soviet Physics Journal Aims and scope

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Literature cited

  1. J. B. Schroader and H. D. Dieselman, Proc. IEEE,55, 125 (1967).

    Google Scholar 

  2. P. E. Roughan and K. E. Manchester, J. Electrotech. Soc. Solid-State Sci.,116, 278 (1969).

    Google Scholar 

  3. R. C. Hunsperger, O. J. March, and C. Mead, Appl. Phys. Lett.,13, 295 (1968).

    Google Scholar 

  4. Tadatsugu Itoh and Yukitoshi Kushiro, J. Appl. Phys.,42, 5120 (1971).

    Google Scholar 

  5. A. A. Gavrilov, V. M. Zelevinskaya, G. A. Kachurin, N. P. Bogomyakov, B. S. Azikov, and L. L. Shirokov, in: Structural Defects in Semiconductors [in Russian], Inst. Fiz. Probl. Sibirsk. Otd. Akad. Nauk SSSR, Novosibirsk (1973), p. 288.

    Google Scholar 

  6. V. M. Zelevinskaya, in: Ionic Alloying of Gallium Arsenide (edited by K. S. Smirnova and G. A. Kachurin) [in Russian], Inst. Fiz. Probl. Sibirsk. Otd. Akad. Nauk SSSR, Novosibirsk (1975).

    Google Scholar 

  7. G. A. Kachurin and N. B. Pridachin, Élektron. Tekh., Ser. 2, No. 1 (65), 40 (1972).

    Google Scholar 

  8. L. S. Berman, Introduction to the Physics of Varicaps [in Russian], Nauka, Leningrad (1968).

    Google Scholar 

  9. Eirung Davis, J. K. Kennedy, and A. C. Yang, Appl. Phys. Lett.,23, 615 (1973).

    Google Scholar 

  10. A. R. Riben and D. L. Feucht, Intern. J. Electron.,20, 583 (1966).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    B. S. Azikov, V. N. Brudnyi, A. P. Vyatkin, M. A. Krivov, V. M. Lupin & L. L. Shirokov

Authors
  1. B. S. Azikov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. N. Brudnyi
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. P. Vyatkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. A. Krivov
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. V. M. Lupin
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. L. L. Shirokov
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 139–142, July, 1978.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Azikov, B.S., Brudnyi, V.N., Vyatkin, A.P. et al. Effect of residual radiation-induced defects on characteristics of ion-implanted gallium arsenide p-n junctions. Soviet Physics Journal 21, 958–960 (1978). https://doi.org/10.1007/BF00892062

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00892062

Keywords

Search

Navigation