Abstract
A type of semiconductor, in which the interband absorption of light energy can result in the formation of a periodic field of the electron temperature, is determined. An approximate value for the light flux needed is found.
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Literature cited
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Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 41–45, July, 1978.
I am extremely grateful to V. L. Bonch-Bruevich for formulating the problem and aiding in its solution.
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Temchin, A.N. Benard phenomenon in a semiconductor. Soviet Physics Journal 21, 870–875 (1978). https://doi.org/10.1007/BF00892039
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DOI: https://doi.org/10.1007/BF00892039