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Characteristic features of operation of extrinsic photoconductors with fixed bias

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Abstract

A calculation is made of the frequency dependence of the photocurrent gain, the spectral density of the carrier fluctuations, and the threshold sensitivity of a photoconductor based on a semiconducting material doped with deep-lying impurities. It is shown that with the growth of the constant electric field, the level of intrinsic noise and the threshold power of the photoconductor rise, this being due to the fluctuations of carriers in the spacecharge region as the carrier time of flight in the specimen decreases to the value of the dielectric relaxation time of the semiconducting material. Good agreement is obtained between the results and experimental data on the photosensitivity of extrinsic photoconductors based on semiconductors of the type Ge:Au, Ge-Si:Zn, and GaAs:Cu, operating at T=77°K.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    A. V. Voitsekhovskii

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  1. A. V. Voitsekhovskii
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 16–23, July, 1978.

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Voitsekhovskii, A.V. Characteristic features of operation of extrinsic photoconductors with fixed bias. Soviet Physics Journal 21, 849–854 (1978). https://doi.org/10.1007/BF00892035

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  • DOI: https://doi.org/10.1007/BF00892035

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