Skip to main content
SpringerLink
Log in

Growth mechanism for thin autoepitaxial silicon layers grown in a low-temperature chloride process

  • Published:
Soviet Physics Journal Aims and scope

Abstract

Electron-microscope investigations show that in the SiCl4,-H2 system at sufficiently high purity of the substrate surface and the gas-phase mixture in a low-temperature process, morphologically perfect epitaxial layers of silicon grow by a step-layer mechanism. Estimates are given for a number of parameters of the silicon-layer growth surface.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Literature cited

  1. J. A. de Falco, Solid-State Tech.,14, No. 7, 76 (1971).

    Google Scholar 

  2. I. M. Skvortsov and B. V. Orion, Growth and Synthesis of Semiconductor Crystals and Films [in Russian], Part I, Nauka, Novosibirsk (1975), p. 132.

    Google Scholar 

  3. Yu. D. Chistyakov, A. Yu. Malinin, and V. M. Biryukov, in: Scientific Works on Microelectronics Problems. Epitaxy [in Russian], No. 4, MIéT, Moscow (1969), p. 92.

    Google Scholar 

  4. Yu. E. Belousova, V. M. Biryukov, and F. R. Khashimov, Elektron. Tekh., Upr. Kach. Standart., No. 4(10), 3–7 (1971).

    Google Scholar 

  5. A. A. Chernov and N. S. Papkov, Dokl. Akad. Nauk SSSR,228, 1083 (1976).

    Google Scholar 

  6. R. L. Schwoebel and E. J. Shipsey, J. Appl. Phys.,37, 3682 (1966).

    Google Scholar 

  7. A. A. Chernov, Usp. Fiz. Nauk,73, 277 (1961).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, USSR

    I. V. Ivonin, L. M. Krasil'nikova, L. G. Lavrent'eva, B. V. Orion & I. M. Skvortsov

Authors
  1. I. V. Ivonin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. L. M. Krasil'nikova
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. L. G. Lavrent'eva
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. B. V. Orion
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. I. M. Skvortsov
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 59–63, February, 1979.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ivonin, I.V., Krasil'nikova, L.M., Lavrent'eva, L.G. et al. Growth mechanism for thin autoepitaxial silicon layers grown in a low-temperature chloride process. Soviet Physics Journal 22, 157–161 (1979). https://doi.org/10.1007/BF00892008

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00892008

Keywords

Search

Navigation